SIOF AND SIO2 DEPOSITION IN A HDP REACTOR - TOOL CHARACTERIZATION ANDFILM ANALYSIS

A high density plasma chemical vapour deposition (HDP CVD) system base d on electron cyclotron resonance (ECR) plasma excitation for depositi on of inter metal dielectric (IMD) is presented. With the system depos ition of SiO2 and SIOF has been performed. The influence of pressure, Ar content in the flow, total flow, bias voltage, microwave power on g ap fill capability and growth rate has been investigated. A figure of merit, the product of gap filling capability and growth rate is define d. In addition measurements of the uniformity of the composition over the wafer of the deposited SiO2 and SiOF layers were performed. The di electric constant of the layers was measured on SiOF films with differ ent composition. The stability of these SiOF films was also analysed. This was done by treating the films with moisture and measuring compos ition before and after this treatment. (C) 1998 Elsevier Science Ltd.