SURFACE-TREATMENT OF ZNSE SUBSTRATE AND HOMOEPITAXY OF ZNSE

High quality ZnSe(100) substrates have been used for homoepitaxial gro wth by molecular beam epitaxy. A chemical pretreatment suitable for Zn Se substrate preparation is determined from x-ray photoemission spectr oscopy studies. Thermal cleaning processes for the ZnSe(100) surface w ere investigated by insitu reflection high energy electron diffraction and the surface phase diagram for ZnSe(100) was obtained for the firs t time. The low temperature photoluminescence spectra recorded from ho moepitaxial layers exhibit unsplit free and bound exciton transitions with strong intensities. The full widths at half maximum of the (400) x-ray diffraction spectra for ZnSe homoepitaxial layer were 17 similar to 31 arcsec.