Ms. Kim et al., LASER-INDUCED DIRECT ETCHING OF GAAS USING CHLOROFLUOROCARBON (CFC) ALTERNATIVE GASES, Journal of electronic materials, 26(5), 1997, pp. 436-439
Non-ozone layer destructive chlorofluorocarbon (CFC) alternatives have
been initially used for laser-induced thermochemical etching of GaAs.
The CFC alternatives used here are CHClF2 and C2H2F4. Respective etch
ing rates of 188 and 160 mu m/s were achieved using CHClF2 and C2H2F4
gases. Aspect ratios of 2.5 and 1.5 were achieved with a single laser
scan for CHClF2 and C2H2F4, respectively. The presence of some reactio
n products deposited on the etched region was dependent on three varia
bles: laser power, scan speed, and gas pressure. Chemical compositions
of the reaction products were measured by Auger electron spectroscopy
.