NEARLY ROOM-TEMPERATURE TYPE-II QUANTUM-WELL LASERS AT 3-4 MU-M

Authors
LIN CH CHANG PC MURRY SJ ZHANG D YANG RQ PEI SS MALIN JI MEYER JR FELIX CL LINDLE JR GOLDBERG L HOFFMAN CA BARTOLI EJ
Citation
Ch. Lin et al., NEARLY ROOM-TEMPERATURE TYPE-II QUANTUM-WELL LASERS AT 3-4 MU-M, Journal of electronic materials, 26(5), 1997, pp. 440-443
Citations number
13
Categorie Soggetti
Engineering, Eletrical & Electronic","Material Science
Journal title
Journal of electronic materials → ACNP
ISSN journal
03615235
Volume
26
Issue
5
Year of publication
1997
Pages
440 - 443
Database
ISI
SICI code
0361-5235(1997)26:5<440:NRTQLA>2.0.ZU;2-X
Abstract
We report optically pumped four-constituent InAs/lnGaSb/InAs/AlSb type -II quantum-well lasers emitting at 3.2-4.1 mu m. Lasing was observed up to 350K under pulsed operation, with a characteristic temperature T -0 up to 68K at temperatures above ambient.