J. Jasinski et al., STRUCTURAL, ELECTRICAL, AND OPTICAL STUDIES OF GAAS IMPLANTED WITH MEV AS OR GA IONS, Journal of electronic materials, 26(5), 1997, pp. 449-458
The structural properties of GaAs implanted with high doses of 2 MeV a
rsenic or gallium ions with subsequent annealing at different temperat
ures were studied by transmission electron microscopy, Rutherford back
scattering spectrometry-channeling, double crystal x-ray diffraction.
Optical absorption, electrical conductivity, Hall effect and time-reso
lved photoluminescence were applied to monitor changes in electrical a
nd optical characteristics of the material. An important conclusion fr
om this investigation is that there was hardly any difference between
materials implanted with gallium or arsenic. For implantation of eithe
r species, a large number of point defects was introduced and for a hi
gh enough dose a buried amorphous layer was formed. Hopping conduction
and high absorption below band-to-band transition were observed for b
oth cases. After low temperature annealing of the amorphous material,
a high density of stacking faults and microtwins were found. Regrowth
rates at the front and back amorphous-crystalline interfaces showed a
significant difference. This was attributed to differences in local no
nstoichiometry of the material at the upper and lower amorphous-crysta
lline interfaces. Structural studies showed the presence of some resid
ual damage (a band of polycrystalline material in the center of the re
grown area) with some associated strain even after annealing at high t
emperatures. Recovery to the conduction band transport in annealed sam
ples was observed but mobilities, of the order of 2000 cm(2)/Vs, were
still smaller than in unimplanted GaAs. These results show that, in as
-implanted material and even after annealing at lower temperatures, th
e point defects introduced by the implantation are responsible for the
very short photocarrier lifetime.