RELIABILITY PHENOMENA UNDER AC STRESS

Authors
HU CM
Citation
Cm. Hu, RELIABILITY PHENOMENA UNDER AC STRESS, Microelectronics and reliability, 38(1), 1998, pp. 1-5
Citations number
14
Categorie Soggetti
Engineering, Eletrical & Electronic
Journal title
Microelectronics and reliability → ACNP
ISSN journal
00262714
Volume
38
Issue
1
Year of publication
1998
Pages
1 - 5
Database
ISI
SICI code
0026-2714(1998)38:1<1:RPUAS>2.0.ZU;2-D
Abstract
Reliability phenomena are usually studied as DC effects at first. AC e ffects become important to setting realistic reliability acceptance cr iteria and predicting circuit reliability as technology scaling gradua lly erodes the margin of safety. This paper reviews the AC effects in hot-electron effect, electromigration, and gate oxide breakdown and st ability. (C) 1998 Elsevier Science Ltd.