HOT-CARRIER INJECTIONS IN SIO2

Authors
VUILLAUME D BRAVAIX A GOGUENHEIM D
Citation
D. Vuillaume et al., HOT-CARRIER INJECTIONS IN SIO2, Microelectronics and reliability, 38(1), 1998, pp. 7-22
Citations number
179
Categorie Soggetti
Engineering, Eletrical & Electronic
Journal title
Microelectronics and reliability → ACNP
ISSN journal
00262714
Volume
38
Issue
1
Year of publication
1998
Pages
7 - 22
Database
ISI
SICI code
0026-2714(1998)38:1<7:HIIS>2.0.ZU;2-P
Abstract
We review the hot-carrier injection phenomena in gate-oxide and the re lated degradation in silicon MOSFETs. We discuss the basic degradation mechanisms and the nature of the created defects by carrier injection s through the gate-oxide. Emphasis is put on the discussion of dynamic hot-carrier injections in MOSFETs and on the stress induced leakage c urrents in very thin (< similar to 5 nm) gate-oxide. (C) 1998 Elsevier Science Ltd.