A LOW-FREQUENCY NOISE STUDY OF HOT-CARRIER STRESSING EFFECTS IN SUBMICRON SI P-MOSFETS

This paper reports on the effect of hot-carrier (HC) stress on the sta tic and low-frequency (LF) noise characteristics of p-MOSFETs, fabrica ted in a 0.7 mu m CMOS technology. The impact of the HC degradation is studied as a function of the effective device length L-eff. It is sho wn that the LF noise spectral density increases up to 20 limes faster than the transconductance in linear operation and is much more pronoun ced for the shortest devices under test. The device parameters are fou nd to degrade according to a 1/L-eff(nu) power law, with nu larger tha n 1. (C) 1998 Published by Elsevier Science Ltd.