NUMERICAL-ANALYSIS ON DETERMINING THE PHYSICAL-MECHANISMS CONTRIBUTING TO THE ABNORMAL BASE CURRENT IN POST-BURN-IN ALGAAS GAAS HBTS/

Authors
SHEU S LIOU JJ HUANG CI
Citation
S. Sheu et al., NUMERICAL-ANALYSIS ON DETERMINING THE PHYSICAL-MECHANISMS CONTRIBUTING TO THE ABNORMAL BASE CURRENT IN POST-BURN-IN ALGAAS GAAS HBTS/, Microelectronics and reliability, 38(1), 1998, pp. 163-170
Citations number
8
Categorie Soggetti
Engineering, Eletrical & Electronic
Journal title
Microelectronics and reliability → ACNP
ISSN journal
00262714
Volume
38
Issue
1
Year of publication
1998
Pages
163 - 170
Database
ISI
SICI code
0026-2714(1998)38:1<163:NODTPC>2.0.ZU;2-1
Abstract
An abnormal base current behavior with an ideality of about 3 is often observed in the AlGaAs/GaAs HBT after it is subjected to a high tempe rature/electrical burn-in condition. Using a two-dimensional device si mulator, this paper studies and determines the main physical mechanism s contributing to such an abnormality. Data measured from two post-bur n-in HBTs are included in support of the finding. (C) 1998 Published b y Elsevier Science Ltd.