S. Sheu et al., NUMERICAL-ANALYSIS ON DETERMINING THE PHYSICAL-MECHANISMS CONTRIBUTING TO THE ABNORMAL BASE CURRENT IN POST-BURN-IN ALGAAS GAAS HBTS/, Microelectronics and reliability, 38(1), 1998, pp. 163-170
An abnormal base current behavior with an ideality of about 3 is often
observed in the AlGaAs/GaAs HBT after it is subjected to a high tempe
rature/electrical burn-in condition. Using a two-dimensional device si
mulator, this paper studies and determines the main physical mechanism
s contributing to such an abnormality. Data measured from two post-bur
n-in HBTs are included in support of the finding. (C) 1998 Published b
y Elsevier Science Ltd.