Hm. Wang et al., EFFECTS OF GROWTH TEMPERATURE ON HIGHLY MISMATCHED INAS GROWN ON GAASSUBSTRATES BY MBE, Journal of crystal growth, 186(1-2), 1998, pp. 38-42
InAs layers were grown on GaAs by molecular beam epitaxy (MBE) at subs
trate temperature 450 and 480 degrees C, and the surface morphology wa
s studied with scanning electron microscopy (SEM). We have observed a
high density of hexagonal deep pits for samples grown at 450 degrees C
, however, the samples grown at 480 degrees C have smooth surface. The
difference of morphology can be explained by different migration of c
ations which is temperature dependent. Cross-sectional transmission el
ectron microscopy (XTEM) studies showed that the growth temperature al
so affect the distributions of threading dislocations in InAs layers b
ecause the motion of dislocations is kinetically limited at lower temp
erature. (C) 1998 Elsevier Science B.V. All rights reserved.