RAPID THERMAL METAL-ORGANIC CHEMICAL-VAPOR-DEPOSITION OF ZNTE

We report the epitaxial growth of ZnTe by means of the rapid thermal m etal organic chemical vapor deposition (RT-MOCVD) technique. Growth of a single layer of undoped (1 1 1) B-face ZnTe on (1 1 1) B-face CdTe substrates has been performed at 370-480 degrees C and a total pressur e of 100 Torr, using diethylzinc (DEZn), diisopropyltelluride (DIPTe) and diethyltelluride (DIPTe) as the metal organic sources. Different p hotothermal pretreatments were used for substrate surface preparation. The epilayers properties were examined by the aids of X-ray four crys tal rocking curve (FCRC), secondary ion mass spectroscopy (SIMS), phot oluminescence (PL) and profilometer thickness measurements. High growt h rates up to 30 m/h have been obtained. X-ray (3 3 3) reflection rock ing curves with full-width at half-maximum (FWHM) of 330-350 arcsec ha ve been obtained for growth at 370-410 degrees C with growth rates 6-3 0 mm/h using in situ photothermal preheating at 400 degrees C. Sharp h igh-intensity PL peaks have been found which were identified as the fr ee exciton peak accompanied by four longitudinal optical(LO) phonon re plica. No broad peaks related to defects have been observed. (C) 1998 Elsevier Science B.V. All rights reserved.