GROWN-IN POINT-DEFECTS AND MICROSCOPIC DEFECT FORMATION IN CZ SILICON- I - THE ONE-DIMENSIONAL, STEADY-STATE APPROXIMATION

A theoretical analysis of vacancy and self-interstitial distribution d uring crystal growth has been made in the one-dimensional, steady-stat e and neutral species-only approximation limit. The effects of crystal movement, normal and up-hill diffusion and annihilation have all been included and, because of nonlinear behavior, the procedure of numeric al continuation was required to generate a parametric study of the ove rall process. The theory is considered to be relevant to the experimen tal data on commercial CZ silicon crystals and can provide some unders tanding concerning the macroscopic ring-type defect often found in suc h crystals. Any comparison between this one-dimensional theory and the available experimental data defines the ranges of the ''effective'' m aterial parameters involved. (C) 1998 Elsevier Science B.V. All rights reserved.