LaNiO3 thin films on MgO were grown by flash MOCVD on single crystalli
ne (0 0 1)MgO substrates using La(thd)(3), Ni(acim)(2) or Ni(thd)(2) (
acim and thd are anions of acetylacetonimine and dipivaloylmethane, re
spectively) as volatile precursors. X-ray diffraction study of the fil
ms with different thicknesses was used to clarify the growth peculiari
ties. Two stages of growth were observed. At the beginning (0 0 1) ori
ented LaNiO3 layer (pseudocubic indices) grows with uniform in-plane a
lignment. Next, another orientation, namely (1 1 0), aligned in-plane
with (0 0 1) layer appears as auxiliary one. In-plane matching variant
s are discussed. Consistent explanation of the preferable in-plane ori
entations observed was achieved with a nearly coincident sites lattice
s (NCSL) analysis. (C) 1998 Elsevier Science B.V. All rights reserved.