A STUDY OF SEMICONDUCTOR SURFACES AND DEVICES BY COUPLED IR PHOTON TUNNELING AND ATOMIC-FORCE MICROSCOPY

Authors
GALLBORRUT P CASTAGNE M WEYHER JL FILLARD JP BONNAFE J
Citation
P. Gallborrut et al., A STUDY OF SEMICONDUCTOR SURFACES AND DEVICES BY COUPLED IR PHOTON TUNNELING AND ATOMIC-FORCE MICROSCOPY, Ultramicroscopy, 71(1-4), 1998, pp. 231-234
Citations number
6
Categorie Soggetti
Microscopy
Journal title
Ultramicroscopy → ACNP
ISSN journal
03043991
Volume
71
Issue
1-4
Year of publication
1998
Pages
231 - 234
Database
ISI
SICI code
0304-3991(1998)71:1-4<231:ASOSSA>2.0.ZU;2-B
Abstract
Processed InP and GaAs surfaces are studied by synchronous atomic-forc e (AFM) and photon scanning tunneling microscopy (PSTM). A beam inject ion system at 1.06 mu m in the transparency range of semiconductors is described which makes it possible to perform total internal reflectio n (TIR) without any specific preparation or shaping on standard wafers . (C) 1998 Elsevier Science B.V. All rights reserved.