C-V DEPENDENCE OF INHOMOGENEOUS SCHOTTKY DIODES

We have studied the C-V dependence of inhomogeneous Schottky diodes by numerical simulation using Poisson's equation and the current continu ity equations under the assumption of quasi-static approximation. Inho mogeneous barriers were modelled by a Gaussian barrier height distribu tion with two different space distributions of particular patches with different barrier heights. The results are compared with the simulati ons of homogeneous diodes. As expected, only a small difference has be en found between the reverse bias C-V curves and the extracted barrier height of homogenous diodes and inhomogeneous diodes simulated with t he mean barrier height of the inhomogeneous diode equal to the barrier height of the homogeneous diode. A capacitance peak was observed for both cases in forward bias. The homogeneous and inhomogeneous diodes d iffer in the peak height. (C) 1998 Elsevier Science Ltd. All rights re served.