ELECTRICAL CHARACTERIZATION OF SILICON-WAFER BONDING STRUCTURES

al-insulator-semiconductor-insulator-semiconductor (MISIS) capacitors, fabricated using direct wafer bonding, have been used for the evaluat ion of the electrical properties of a silicon film (4.1 mu m), a burie d oxide (42 nm) and its interfaces. After the dry oxidation of the fil m, the grown oxide has a thickness of 25 nm, and the doping concentrat ion of the film increased by one order of magnitude. The minority carr ier generation mechanism was detected. Its activation energy (554 meV) , denotes the high-quality of the interfaces. A deep level (315 meV) w as found by DLTS. The most probable sources of this trap are mainly th e divacancy-phosphorus complexes presented in the Si film. The concent ration of dislocations in Si film is very low (< 10(5) cm(-2)). Bias-t emperature stress (BTS) showed the presence of a low concentration of positive charges (2.2 x 10(9) cm(-2)) in the oxide. (C) 1998 Elsevier Science Ltd. All rights reserved.