DEEP-LEVEL INVESTIGATION ON N-IN0.35GA0.65AS GAAS STRUCTURES/

Authors
GOMBIA E MOSCA R PAL D MOTTA A NASI L BOSACCHI A FRANCHI S
Citation
E. Gombia et al., DEEP-LEVEL INVESTIGATION ON N-IN0.35GA0.65AS GAAS STRUCTURES/, Solid-state electronics, 42(2), 1998, pp. 211-215
Citations number
19
Categorie Soggetti
Engineering, Eletrical & Electronic","Physics, Applied","Physics, Condensed Matter
Journal title
Solid-state electronics → ACNP
ISSN journal
00381101
Volume
42
Issue
2
Year of publication
1998
Pages
211 - 215
Database
ISI
SICI code
0038-1101(1998)42:2<211:DIONGS>2.0.ZU;2-N
Abstract
We have investigated the deep electronic levels in n-In0.35Ga0.65As ep itaxial layers grown by molecular beam epitaxy (MBE) on graded InxGa1- xAs buffer/GaAs structures. InxGa1-xAs buffer layers with linear, para bolic and power composition grading law, respectively have been consid ered. The dependence of the deep levels distribution on the buffer gra ding law as well as on growth parameters such as the growth temperatur e and use of As-2 or As-4 beams is reported. (C) 1998 Elsevier Science Ltd. All rights reserved.