ELECTRICAL CHARACTERIZATION OF AL N-SI/P-SI SCHOTTKY JUNCTIONS PREPARED BY PLASMA IMMERSION IMPLANTATION/

Authors
HORVATH ZJ ADAM M DUCSO C PINTER I VANTUYEN V BARSONY I GOMBIA E MOSCA R MAKARO Z
Citation
Zj. Horvath et al., ELECTRICAL CHARACTERIZATION OF AL N-SI/P-SI SCHOTTKY JUNCTIONS PREPARED BY PLASMA IMMERSION IMPLANTATION/, Solid-state electronics, 42(2), 1998, pp. 221-228
Citations number
56
Categorie Soggetti
Engineering, Eletrical & Electronic","Physics, Applied","Physics, Condensed Matter
Journal title
Solid-state electronics → ACNP
ISSN journal
00381101
Volume
42
Issue
2
Year of publication
1998
Pages
221 - 228
Database
ISI
SICI code
0038-1101(1998)42:2<221:ECOANS>2.0.ZU;2-W
Abstract
Current-voltage and capacitance-voltage measurements on Al/n-Si/p-Si S chottky junctions prepared by plasma immersion implantation of H+ and P+ ions have been performed in the temperature range of 80-360 K. Scho ttky barrier heights up to 0.79 V have been obtained which value is am ong the highest ones reported for p-Si so far. The unusual electrical properties are discussed in terms of full depletion approximation, lat eral inhomogeneity of barrier height, Fermi-level pinning and band gap broadening due to hydrogenation. An overview of electrical behaviour of metal/n/p Schottky junctions is presented. (C) 1998 Elsevier Scienc e Ltd. All rights reserved.