ELECTRICAL CHARACTERIZATION OF AU SIOX/N-GAAS JUNCTIONS/

Authors
IVANEO J HORVATH ZJ VANTUYEN V COLUZZA C ALMEIDA J TERRASI A PECZ B VINCZE G MARGARITONDO G
Citation
J. Ivaneo et al., ELECTRICAL CHARACTERIZATION OF AU SIOX/N-GAAS JUNCTIONS/, Solid-state electronics, 42(2), 1998, pp. 229-233
Citations number
27
Categorie Soggetti
Engineering, Eletrical & Electronic","Physics, Applied","Physics, Condensed Matter
Journal title
Solid-state electronics → ACNP
ISSN journal
00381101
Volume
42
Issue
2
Year of publication
1998
Pages
229 - 233
Database
ISI
SICI code
0038-1101(1998)42:2<229:ECOASJ>2.0.ZU;2-9
Abstract
The electrical behavior of Au/SiOx/n-GaAs Schottky structures has been studied using a statistical approach. II has been concluded that the obtained unusual electrical behavior is connected mainly with differen t Fermi-level pinning position and lateral microinhomogeneities of the barrier height induced by different average thickness of the SiOx int erlayer along the wafer. The results of cross-sectional transmission e lectron microscopy and the temperature dependence of the electrical ch aracteristics confirm this conclusion. (C) 1998 Elsevier Science Ltd. All rights reserved.