A CONTRIBUTION TO THE ANALYSIS OF THE I-V CHARACTERISTICS OF SCHOTTKYSTRUCTURES

The nature of the electrical behaviour of rectifying metal-semiconduct or structures is still not understood satisfactorily. The measured exp erimental characteristics and evaluated parameters of Schottky structu res like the Schottky barrier height phi(b) and ideality coefficient n can be interpreted in different ways. Our analysis is based on the me asurement of the I-V characteristics of Schottky diodes in a wide temp erature range. The deviation from the thermionic-emission current caus ed by generation-recombination, tunnelling or leakage can significantl y affect the derived parameters of the Schottky structure. By measurem ent of the I-V characteristics in a wide temperature range the contrib ution of these mechanisms can be subtracted from the total current. Ne xt the parameters of the Schottky structure can be evaluated from the 'pure' thermionic emission-drift diffusion current more precisely. The presented approach represents a reasonable compromise between physica l rigorosity and practical applicability of the empirical analysis and determination of some electrophysical parameters of the Schottky stru ctures. In addition, numerical simulation is presented as a powerful t ool for complementary analysis and interpretation of experimental resu lts. (C) 1998 Elsevier Science Ltd. All rights reserved.