SCHOTTKY CONTACTS ON CF4 H-2 REACTIVE ION ETCHED BETA-SIC/

Authors
CONSTANTINIDIS G KUZMIC J MICHELAKIS K TSAGARAKI K
Citation
G. Constantinidis et al., SCHOTTKY CONTACTS ON CF4 H-2 REACTIVE ION ETCHED BETA-SIC/, Solid-state electronics, 42(2), 1998, pp. 253-256
Citations number
14
Categorie Soggetti
Engineering, Eletrical & Electronic","Physics, Applied","Physics, Condensed Matter
Journal title
Solid-state electronics → ACNP
ISSN journal
00381101
Volume
42
Issue
2
Year of publication
1998
Pages
253 - 256
Database
ISI
SICI code
0038-1101(1998)42:2<253:SCOCHR>2.0.ZU;2-A
Abstract
CVD grown n-type beta-SIC grown on a (100) Si substrate was reactive i on etched (RIE) in CF4/H-2 gas mixtures. The etched surfaces were exam ined by SEM, FTIR-spectroscopy and AFM. Au Schottky diodes Fabricated on the etched surface were compared to reference contacts on the non-e tched surface. An oxidation step following the dry etching drastically improves the diode characteristics. (C) 1998 Elsevier Science Ltd. Al l rights reserved.