MAGNETIC-FIELD-INDUCED RESONANCE IN A DOUBLE-BARRIER RESONANT-TUNNELING DIODE

Authors
BELYAEV AE VITUSEVICH SA GLAVIN BA KONAKOVA RV FIGIELSKI T DOBROWOLSKI W MAKOSA A KRAVCHENKO LN
Citation
Ae. Belyaev et al., MAGNETIC-FIELD-INDUCED RESONANCE IN A DOUBLE-BARRIER RESONANT-TUNNELING DIODE, Solid-state electronics, 42(2), 1998, pp. 257-261
Citations number
15
Categorie Soggetti
Engineering, Eletrical & Electronic","Physics, Applied","Physics, Condensed Matter
Journal title
Solid-state electronics → ACNP
ISSN journal
00381101
Volume
42
Issue
2
Year of publication
1998
Pages
257 - 261
Database
ISI
SICI code
0038-1101(1998)42:2<257:MRIADR>2.0.ZU;2-K
Abstract
The effect of a magnetic field in the singular enhancement of tunnelin g near threshold has been investigated in specifically designed double -barrier resonant tunneling structures. The experimental results prove that an additional increase of tunnel current is due to impurity-assi sted tunneling. It is shown that a donor bound state arises as a resul t of dopant diffusion into the barrier. These states are identified as strongly localized DX centers. (C) 1998 Elsevier Science Ltd. All rig hts reserved.