THE IN-AS-SB PHASE-DIAGRAM AND LPE GROWTH OF INASSB LAYERS ON INAS ATEXTREMELY LOW-TEMPERATURES

A calculation of the In-As-Sb phase diagram in the low-temperature ran ge 300 400 degrees C has been made applying the rare simple solution m odel, By using the calculated data an extremely low temperature LPE wa s performed for growing InAs1-xSbx layers on InAs substrates at temper atures as low as 300 degrees C. It was shown that high-quality layers can be grown on InAs with x up to 0.26. SEM microprobe compositional a nalysis and X-ray diffraction analysis confirmed their homogeneity and high crystal quality and the promise of this material for mid-infrare d optoelectronic devices. (C) 1998 Elsevier Science B.V. All rights re served.