EPITAXIAL-GROWTH OF HEXAGONAL AND CUBIC CDS ON (100) AND 2-DEGREES OFF-ORIENTED (100)GAAS AND CUINSE2, AND MISALIGNMENT BETWEEN [0001](CDS)AND [111](GAAS) AXES

Epitaxial growth of CdS was carried out on GaAs and CuInSe2 substrates in the temperature range 420-760 degrees C using the Cd-H2S-H-2 syste m. Hexagonal similar to(3 0 (3) over bar 4) or cubic(1 0 0)CdS single crystals were grown on 2 degrees(+/- 0.3 degrees) off-oriented (1 0 0) GaAs depending upon the growth temperature. The occurrence of the hex agonal(3 0 (3) over bar 4)CdS single crystal could be explained in ter ms of a minimum lattice-mismatch criterion between the film and substr ate; the parallel arrangement between the dose-packed planes of CdS an d GaAs, i.e., (0 0 0 1)A(cas)\\(1 1 1)A(GaAs), was realized in one set with a smaller mismatch of the two sets of the close-packed planes. O n (1 0 0)GaAs, single crystals of hexagonal CdS were not grown; two se ts of similar to(4 0 (4) over bar 5)-oriented hexagonal CdS crystallit es, or two sets of similar to(3 0 (3) over bar 4)-oriented hexagonal C dS and cubic (1 0 0)CdS crystallites were grown. At a low temperature (440 degrees C), single crystals of cubic (1 0 0)CdS were epitaxially grown on (1 0 0)GaAs. (C) 1998 Elsevier Science B.V. All rights reserv ed.