Sf. Yoon et al., ELECTRICAL AND OPTICAL-PROPERTIES OF INP GROWN AT DIFFERENT CRACKING TEMPERATURE AND V III RATIO USING A VALVE PHOSPHORUS CRACKER CELL/, Journal of crystal growth, 186(4), 1998, pp. 475-479
We report the molecular beam epitaxial (MBE) growth of epitaxial InP u
sing a valve phosphorous cracker cell at a range of cracking zone temp
erature (T-cr = 875-950 degrees C) and V/III flux ratio (V/III = 1.2-9
.3). The as-grown epitaxial InP on InP(100) substrate was found to be
n-type from Hall measurements. The background electron concentration a
nd mobility exhibited a pronounced dependence on the cracking zone tem
perature and V/III flux ratio. Using a cracking zone temperature of 85
0 degrees C, the highest 77 K electron mobility of 25500 cm(2)/V s was
achieved at a V/III ratio of 2.3 at a substrate temperature (T-s) of
480 degrees C. The corresponding background electron concentration was
5.65 x 10(15) cm(-3). The photoluminescence (PL) spectra showed two p
rominent peaks at 1.384 and 1.415 eV, with the intensity of the low-en
ergy peak becoming stronger at higher cracking zone temperatures. The
PL full-width at half-maximum (FWHM) showed a significant reduction as
the V/III ratio was lowered, indicating an improvement in the optical
quality of the samples. The lowest PL FWHM achieved was 6.3 meV. (C)
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