CHARACTERIZATION OF INP GROWN BY LEC USING GLASSY-CARBON, SILICA AND PBN CRUCIBLES

Undoped InP single crystals were grown by liquid-encapsulated Czochral ski method (LEG) using glassy carbon, silica and PBN crucibles. The sa mples were characterized by Hall and resistivity measurements, photolu minescence at 2 K and glow discharge mass spectroscopy. The residual i mpurity concentrations for InP grown using glassy carbon or silica cru cible are of the same order of magnitude but both higher than that for InP grown with PEN crucibles. All samples exhibit good optical qualit y. The main acceptor impurities detected in all samples were C and Zn, while the main donors were S and Si. The InP grown from the glassy ca rbon crucible has the lowest C concentration and the main dopant detec ted in this sample was S originating from the crucible. (C) 1998 Elsev ier Science B.V. All rights reserved.