GROWTH OF ZNSE ON GAAS(110) SURFACES BY MOLECULAR-BEAM EPITAXY

Single crystal films of ZnSe have been grown on nonpolar GaAs(110) sur faces by molecular beam epitaxy (MBE). The epitaxial films have been c haracterized by in situ reflection high-energy electron diffraction (R HEED), ex situ scanning electron microscopy (SEM) and X-ray diffractio n. RHEED and SEM images of the surfaces reveal the formation of facets which are aligned along the [001] direction. The formation of facets indicates that ZnSe growth on the (110) surface proceeds 6 degrees-13 degrees off the vicinal (110) surface. Facet-free ZnSe surface has bee n successfully grown on a GaAs(110) 6 degrees-off the substrate. (C) 1 998 Elsevier Science B.V. All rights reserved.