FUSED QUARTZ DISSOLUTION RATE IN SILICON MELTS - INFLUENCE OF BORON ADDITION

Citation
K. Abe et al., FUSED QUARTZ DISSOLUTION RATE IN SILICON MELTS - INFLUENCE OF BORON ADDITION, Journal of crystal growth, 186(4), 1998, pp. 557-564
Citations number
6
Categorie Soggetti
Crystallography
Journal title
ISSN journal
00220248
Volume
186
Issue
4
Year of publication
1998
Pages
557 - 564
Database
ISI
SICI code
0022-0248(1998)186:4<557:FQDRIS>2.0.ZU;2-Y
Abstract
The influence of boron addition on fused quartz dissolution rate in si licon melts has been investigated. Fused quartz dissolution rate incre ases with increasing boron concentration by using SiC-coated crucibles . Whereas, in case of fused quartz crucibles, fused quartz dissolution rate decreases with increasing boron concentration. The temperature d ependence of fused quartz dissolution rate in boron-doped silicon melt s is markedly observed. It has been found that in both cases the fract ion of cristobalite area grown on fused quartz rod surface varies wide ly the fused quartz dissolution rate. (C) 1998 Elsevier Science B.V. A ll rights reserved.