GENERATION AND SUPPRESSION PROCESS OF CRYSTALLINE DEFECTS IN GAP LAYERS GROWN ON MISORIENTED SI(100) SUBSTRATES

We have investigated the generation process of crystalline defects in GaP layers grown on Si substrates (GaP:Si) by molecular beam epitaxy ( MBE) and migration enhanced epitaxy (MEE). Transmission electron micro scopy observations revealed that few threading defects such as stackin g faults and threading dislocations are detected ill GaP/Si by MEE. In addition a regular network of misfit dislocations was generated durin g the lattice relaxation process. On the other hand. stacking faults w ere generated in high density at the hetero-interface and threading di slocations as well as interfacial misfit dislocations were observed in CaP/Si by MBE. The generation of stacking faults would be related to the coalescence or expansion of isolated GaP islands and the presence of stacking faults would affect the generation of threading dislocatio ns. (C) 1998 Elsevier Science B.V. All rights reserved.