SURFACE MELTING IN THE HETEROEPITAXIAL NUCLEATION OF DIAMOND ON NI

Citation
Pc. Yang et al., SURFACE MELTING IN THE HETEROEPITAXIAL NUCLEATION OF DIAMOND ON NI, Journal of crystal growth, 187(1), 1998, pp. 81-88
Citations number
18
Categorie Soggetti
Crystallography
Journal title
ISSN journal
00220248
Volume
187
Issue
1
Year of publication
1998
Pages
81 - 88
Database
ISI
SICI code
0022-0248(1998)187:1<81:SMITHN>2.0.ZU;2-W
Abstract
Surface melting associated with the heteroepitaxial nucleation of diam ond on Ni was investigated. Scanning electron microscopy of quenched s amples revealed flow patterns and a recrystallized surface morphology. A combination of techniques including in situ optical monitoring, dif ferential thermal analysis, Auger depth profile analysis, and cross-se ction transmission electron microscopy (TEM) analysis were performed t o identify the nature of the molten layer. Data obtained from differen t experiments were in good mutual agreement. All experimental results strongly indicated that a molten Ni-C-H surface layer was involved in the nucleation process. The presence of both carbon and atomic hydroge n played an important role in the depression of the melting point whic h was measured to be > 300 degrees C less than the melting point of pu re Ni. (C) 1998 Published by Elsevier Science B.V. All rights reserved .