INAS QUANTUM DOTS GROWN ON NONCONVENTIONALLY ORIENTED GAAS SUBSTRATES

We report on the molecular beam epitaxy growth of InAs self-assembled quantum dots on (N 1 1)A/B GaAs substrates, where N ranges from 2 to 5 . For each substrate we prepared three different InAs coverages (from approximate to 1.0 x 10(15) to approximate to 1.5 x 10(15) InAs molecu les cm(-2)). with growth parameters optimised for self assembly on the (1 0 0) surface. At 2 K, all the samples show photoluminescence of ev ident quantum dot origin with an efficiency comparable lo that of samp les grown on {1 0 0}GaAs substrates. Photoluminescence spectra show in homogeneously broadened, structured peaks in the 1.1-1.4 eV range. Ful l optical characterisation is reported. (C) 1998 Elsevier Science B.V. All rights reserved.