GROWTH-CHARACTERISTICS OF GAINN ON (0001)SAPPHIRE BY PLASMA-EXCITED ORGANOMETALLIC VAPOR-PHASE EPITAXY

Growth characteristics of GaInN on (0 0 0 1)sapphire substrate by plas ma-excited organometallic vapor phase epitaxy (OMVPE) are investigated . GaInN with whole In composition is obtained at 680 degrees C, which is at least 100 degrees C higher than reported temperature for convent ional OMVPE using NH3. The distribution coefficient of Tn scarcely dep ends on the growth temperature, which indicates that dissociation of I n-N bond is compensated even at high growth temperatures. This specifi c feature is attributed to high reaction rate of excited nitrogen spec ies in plasma-excited N-2. The compositional inhomogeneity of the GaIn N layer is also characterized. (C) 1998 Elsevier Science B.V. All righ ts reserved.