LIQUID-PHASE EPITAXIAL-GROWTH OF INASPSB INAS HETEROSTRUCTURE/

Quaternary InAsPSb epitaxial layers have been directly grown on InAs s ubstrate without buffer layer using both the supercooling and step-coo ling liquid-phase epitaxy (LPE) techniques. Some properties of InAsPSb /InAs layers were investigated. The quaternary layer is lattice matche d to InAs by about 1.6 x 10(-3). X-ray diffraction spectra half-width maximum of the quaternary epilayer is about 200 s. I-V characteristics of the p-n junction formed between p-InAsPSb and n-InAs substrate was measured at 300 and 77 Fl. The laser emission with wavelength of 3.09 mu m was observed at 12 K from the p-n junction of the p-InAs0.82P0.1 2Sb0.06 epilayers and the n-InAs substrate. (C) 1998 Elsevier Science B.V. All rights reserved.