DEPENDENCE OF PHOTOLUMINESCENCE INDUCED BY CARBON CONTAMINATION ON GESI STRUCTURE

We studied the dependence of photoluminescence induced by carbon conta mination on the Ge/GeSi structure. It is found that a carbon and silic on defect complex may be formed in a special structure by opening the in situ high-energy electron diffraction test during growth. There is an important difference in the dependence of photoluminescence on the temperature between the defect complex in our samples and in bulk Si. where the impurity-active center is generated by high-energy electron (about several MeV) irradiation. The quenching temperature of the phot oluminescence from the impurity-active center is higher in our Ge/GeSi structure than in bulk Si. The defect complex may serve as an impurit y-active center for a possible application in making Si-based light-em itting diodes whose wavelength is around 1.3 mu m in the window of opt ical communication. (C) 1998 Elsevier Science B.V. All rights reserved .