FULLY-DEPLETED SOI CMOS FOR ANALOG APPLICATIONS

Authors
COLINGE JP
Citation
Jp. Colinge, FULLY-DEPLETED SOI CMOS FOR ANALOG APPLICATIONS, I.E.E.E. transactions on electron devices, 45(5), 1998, pp. 1010-1016
Citations number
40
Categorie Soggetti
Engineering, Eletrical & Electronic","Physics, Applied
Journal title
I.E.E.E. transactions on electron devices → ACNP
ISSN journal
00189383
Volume
45
Issue
5
Year of publication
1998
Pages
1010 - 1016
Database
ISI
SICI code
0018-9383(1998)45:5<1010:FSCFAA>2.0.ZU;2-U
Abstract
Fully-depleted (FD) SOI MOSFET's offer near-ideal properties for analo g applications. In particular their high transconductance to drain cur rent ratio allows one to obtain a higher gain than from bulk de,ices, and the reduced body effect permits one to fabricate more efficient pa ss gates. The excellent behavior of SOI MOSFET's at high temperature o r at gigahertz frequencies is outlined as well.