ACCURATE SOI MOSFET CHARACTERIZATION AT MICROWAVE-FREQUENCIES FOR DEVICE PERFORMANCE OPTIMIZATION AND ANALOG MODELING

Authors
RASKIN JP GILLON R CHEN J VANHOENACKERJANVIER D COLINGE JP
Citation
Jp. Raskin et al., ACCURATE SOI MOSFET CHARACTERIZATION AT MICROWAVE-FREQUENCIES FOR DEVICE PERFORMANCE OPTIMIZATION AND ANALOG MODELING, I.E.E.E. transactions on electron devices, 45(5), 1998, pp. 1017-1025
Citations number
23
Categorie Soggetti
Engineering, Eletrical & Electronic","Physics, Applied
Journal title
I.E.E.E. transactions on electron devices → ACNP
ISSN journal
00189383
Volume
45
Issue
5
Year of publication
1998
Pages
1017 - 1025
Database
ISI
SICI code
0018-9383(1998)45:5<1017:ASMCAM>2.0.ZU;2-S
Abstract
The maturation of low-cost silicon-on-insulator (SOT) MOSFET technolog y in the microwave domain has brought about a need to develop specific characterization techniques. An original scheme is presented, which, by combining careful design of probing and calibration structures, rig orous in situ calibration, and a new powerful direct extraction method , allows reliable identification of the parameters of the non-quasi-st atic (NQS) small-signal model for MOSFET's. The extracted model is sho wn to be valid up to 40 GHz.