NOISE CONTRIBUTION OF THE BODY RESISTANCE IN PARTIALLY-DEPLETED SOI MOSFETS

Authors
FACCIO F ANGHINOLFI F HEIJNE EHM JARRON P CRISTOLOVEANU S
Citation
F. Faccio et al., NOISE CONTRIBUTION OF THE BODY RESISTANCE IN PARTIALLY-DEPLETED SOI MOSFETS, I.E.E.E. transactions on electron devices, 45(5), 1998, pp. 1033-1038
Citations number
10
Categorie Soggetti
Engineering, Eletrical & Electronic","Physics, Applied
Journal title
I.E.E.E. transactions on electron devices → ACNP
ISSN journal
00189383
Volume
45
Issue
5
Year of publication
1998
Pages
1033 - 1038
Database
ISI
SICI code
0018-9383(1998)45:5<1033:NCOTBR>2.0.ZU;2-T
Abstract
An additional noise component is observed in the noise spectrum of tra nsistors in a partially-depleted (PD) medium-thickness SOI-CMOS techno logy. We identify the origin of this additional noise in the noisy res istance of the body film. This resistance, coupled to the gate capacit ance, forms an RC filter and generates the hump-shape of the additiona l noise component. Several experimental observations that support this model are presented.