SUPPRESSION OF PARASITIC BIPOLAR ACTION IN ULTRA-THIN-FILM FULLY-DEPLETED CMOS SIMOX DEVICES BY AR-ION IMPLANTATION INTO SOURCE/DRAIN REGIONS/

This paper proposes a new technique that can effectively suppress the parasitic bipolar action (PBA) in ultrathin-film fully-depleted (FD) n MOSFET's/SIMOX with a Boating body. In this technique, recombination c enters are created in the source and drain (S/D) regions by deep Ar-io n implantation. They act to reduce the number of holes that accumulate in the body region by increasing the hole current flowing from the bo dy region into the source region. Consequently, the rise of the body p otential is lowered, and the parasitic bipolar action can be suppresse d. A 0.25-mu m gate nMOSFET/SIMOX fabricated with an Ar dose of 2 x 10 (14) cm(-2) exhibited excellent improvements in electrical characteris tics: a reduction in the off-leakage current of over two orders of mag nitude and an increase in the drain-to-source breakdown voltage beyond 0.6 V.