SEMICONDUCTOR THICKNESS EFFECTS IN THE DOUBLE-GATE SOI MOSFET

Influence of the semiconductor film thickness in the double-gate silic on-on-insulator (SOI) MOSFET on the electron concentration distributio n, electron charge density, threshold voltage, electron effective mobi lity, and drain current is theoretically analyzed., The consideration of the semiconductor region is based on two descriptions: the ''classi cal'' model based on a solution to the Poisson equation and the ''quan tum'' model based on a self-consistent solution to the Schrodinger and Poisson equation system. The electron effective mobility and the drai n current are calculated with the use of the local mobility model.