MONITORING HOT-CARRIER DEGRADATION IN SOI MOSFETS BY HOT-CARRIER LUMINESCENCE TECHNIQUES

This paper addresses the problem of hot-carrier degradation and lifeti me monitoring in SOI MOSFET's by means of hot-carrier-induced luminesc ence measurements. The peculiar emission behavior of SOI devices is cl arified over a broad range of bias conditions by means of comparison w ith that of BULK; MOSFET's. It is shown that detailed analysis of hot- carrier luminescence measurements at different photon energies provide s a noninvasive monitoring tool for various aspects of degradation, su ch as worst case bias conditions, threshold voltage shift, and variati ons of the electric field and hot-carrier population in the damaged re gion, The measured light intensity represents also a sensitive acceler ation factor for the extrapolation of lifetimes to real operating cond itions.