OPPOSITE-CHANNEL-BASED INJECTION OF HOT-CARRIERS IN SOI MOSFETS - PHYSICS AND APPLICATIONS

An extensive study of the recently observed opposite-channel-based inj ection (OCBI) of hot-carriers in SOI MOSFET's is carried out by PISCES numerical calculations. The study reveals similar patterns of injecti on for partially-depleted (PD) and fully-depleted (FD) devices, althou gh there are significant quantitative differences. Important differenc es also exist when stressing the de,ice with the body floating versus body grounded. The results demonstrate that when stressing one channel , carriers can and are injected into the opposite gate. The results al so demonstrate that under appropriate bias conditions pure electron/ho le injection takes place, and establish these conditions. The practica l significance of this ability to inject only electrons or only holes in any desired sequence is illustrated by exploiting it to investigate the time-power lan of interface state generation and to design a SOI EEPROM cell with a back channel based erasing scheme.