EFFECT OF COLLECTOR STRUCTURE ON THE FBSOA OF THE DIELECTRICALLY-ISOLATED LIGBT

In this paper, the dependence of the forward biased safe operating are a (FBSOA) on the collector structures of the dielectrically-isolated ( DI) lateral insulated gate bipolar transistor (LIGBT) has been analyze d. In addition to the on-state and switching characteristics, pulsed m easurements were performed to determine the FBSOA of these devices. Tw o-dimensional (2-D) numerical simulations were performed to understand the physics behind the operation of devices fabricated with various c ollector designs. These studies reveal that some of the structures beh ave like the conventional LIGBT, while others behave like the LDMOSFET with respect to their FBSOA., Some of the structures also exhibit a u nique high-voltage blocking ability while carrying current, while havi ng much smaller breakdown voltages.