HIGH-DENSITY INDUCTIVELY-COUPLED PLASMA-ETCHING OF GAAS ALGAAS IN BCL3/CL-2/AR - A STUDY USING A MIXTURE DESIGN EXPERIMENT/

Authors
AGARWALA S HORST SC KING O WILSON R STONE D DAGENAIS M CHEN YJ
Citation
S. Agarwala et al., HIGH-DENSITY INDUCTIVELY-COUPLED PLASMA-ETCHING OF GAAS ALGAAS IN BCL3/CL-2/AR - A STUDY USING A MIXTURE DESIGN EXPERIMENT/, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 16(2), 1998, pp. 511-514
Citations number
9
Categorie Soggetti
Physics, Applied","Engineering, Eletrical & Electronic
Journal title
Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena → ACNP
ISSN journal
10711023
Volume
16
Issue
2
Year of publication
1998
Pages
511 - 514
Database
ISI
SICI code
1071-1023(1998)16:2<511:HIPOGA>2.0.ZU;2-6
Abstract
Inductively coupled plasma etching of GaAs/AlGaAs was investigated in BCl3/Cl-2/Ar using a mixture design experiment. According to the model extracted from the experiment, the etch rate was Linearly proportiona l to the gas flows, and the process was reactant or diffusion limited. Etch rates from 200 to over 3000 nm/min were obtained. Equirate etch was observed for AlGaAs films with different aluminum content in the e ntire gas composition range. A quadratic dependence was observed for t he etch rates of the resist mask with the gas flows. Etched profiles r anged from positively sloped to vertical to negatively sloped dependin g on the gas composition. Smooth etched surfaces and mirror quality sm ooth sidewalls were obtained. (C) 1998 American Vacuum Society. [S0734 -211X(98)05702-3].