ANTENNA SPUTTERING IN AN INTERNAL INDUCTIVELY-COUPLED PLASMA FOR IONIZED PHYSICAL VAPOR-DEPOSITION

Citation
Je. Foster et al., ANTENNA SPUTTERING IN AN INTERNAL INDUCTIVELY-COUPLED PLASMA FOR IONIZED PHYSICAL VAPOR-DEPOSITION, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 16(2), 1998, pp. 532-535
Citations number
13
Categorie Soggetti
Physics, Applied","Engineering, Eletrical & Electronic
ISSN journal
10711023
Volume
16
Issue
2
Year of publication
1998
Pages
532 - 535
Database
ISI
SICI code
1071-1023(1998)16:2<532:ASIAII>2.0.ZU;2-#
Abstract
Ionized physical vapor deposition (IPVD) is an emerging technology for coating high aspect ratio vias and trenches for the microelectronics industry. Ionized physical vapor deposition systems typically utilize an inductive discharge generated by an internal antenna. Because the a ntenna is immersed in the plasma, the possibility of antenna material sputtering into the discharge is a contamination issue. In this invest igation, optical emission spectroscopy is used to acquire spectra from an IPVD system to monitor the presence of antenna metal in the discha rge. The observed presence of antenna material in the spectra confirms that antenna sputtering is occurring. Experimental sputter rates as d etermined from witness plate observations are in reasonable agreement with predictions of a simplified model of antenna sputtering, indicati ng that the sputtering results from large self-bias voltages on the rf antenna. (C) 1998 American Vacuum Society. [S0734-211X(98)00802-6].