STUDY OF THE INFLUENCE OF GAS CHEMISTRY ON NOTCHING IN METAL ETCHING

Authors
TABARA S KITAYAMA Y HATAKEYAMA T KATSURAGI K TANABE M
Citation
S. Tabara et al., STUDY OF THE INFLUENCE OF GAS CHEMISTRY ON NOTCHING IN METAL ETCHING, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 16(2), 1998, pp. 553-557
Citations number
15
Categorie Soggetti
Physics, Applied","Engineering, Eletrical & Electronic
Journal title
Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena → ACNP
ISSN journal
10711023
Volume
16
Issue
2
Year of publication
1998
Pages
553 - 557
Database
ISI
SICI code
1071-1023(1998)16:2<553:SOTIOG>2.0.ZU;2-P
Abstract
A comparison of notching of metal etching in Cl-2/BCl3 and HCl plasma was made by using a transformer coupled plasma etcher. We found that n otches can be reduced by eliminating BCl3 from gases for overetching. Furthermore, the HCl/He overetch process provides notch-free profiles with high selectivities. The reduction in sidewall attack by heavy ion s (e.g., BCl2+ or BCl3+) and scavenging of excess Cl radicals by the H radical are considered possible reasons for reduced notching in the H Cl/He process. (C) 1998 American Vacuum Society. [S0734-211X(98)06402- 6].