BROMINE METHANOL WET CHEMICAL ETCHING OF VIA HOLES FOR INP MICROWAVE DEVICES/

Authors
TRASSAERT S BOUDART B PIOTROWICZ S CROSNIER Y
Citation
S. Trassaert et al., BROMINE METHANOL WET CHEMICAL ETCHING OF VIA HOLES FOR INP MICROWAVE DEVICES/, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 16(2), 1998, pp. 561-564
Citations number
7
Categorie Soggetti
Physics, Applied","Engineering, Eletrical & Electronic
Journal title
Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena → ACNP
ISSN journal
10711023
Volume
16
Issue
2
Year of publication
1998
Pages
561 - 564
Database
ISI
SICI code
1071-1023(1998)16:2<561:BMWCEO>2.0.ZU;2-B
Abstract
We report on the realization of via holes on InP material (for the fir st time to our knowledge) using bromine/methanol wet chemical etching. Typical dimension of the via holes is about 80 mu m in diameter. A sp ecific layout has been accomplished to obtain the via hole equivalent circuit. Measurements have been performed from 50 MHz to 30 GHz. They exhibit losses of 0.1 dB at 30 GHz. The via hole equivalent circuit is found to be a resistance and an inductance in serial configuration wi th typical values of 0.4 Omega and 26 pH, respectively. (C) 1998 Ameri can Vacuum Society. [S0734-211X(98)00702-1].