GATED SI FIELD EMITTER ARRAY PREPARED BY USING ANODIZATION

High aspect-ratio gated field emitter arrays have been fabricated usin g silicon tip prepared by the anodization of a silicon wafer with peri odic n/p junctions. The tips were formed by the preferential growth of porous silicon in p-type material and were transferred to a separate silicon substrate by direct bonding. Gate electrodes were then formed by depositing a WSi2 film over the tips, and apertures were subsequent ly coated by etching with an argon milling process. The resulting gate d tip arrays demonstrated field emission, although higher than usual g ate voltages were required. (C) 1998 American Vacuum Society. [S0734-2 11X(98)01102-0].