PREPARATION OF ULTRASHARP DIAMOND TIP EMITTERS BY ION-BEAM ETCHING

Citation
An. Stepanova et al., PREPARATION OF ULTRASHARP DIAMOND TIP EMITTERS BY ION-BEAM ETCHING, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 16(2), 1998, pp. 678-680
Citations number
14
Categorie Soggetti
Physics, Applied","Engineering, Eletrical & Electronic
ISSN journal
10711023
Volume
16
Issue
2
Year of publication
1998
Pages
678 - 680
Database
ISI
SICI code
1071-1023(1998)16:2<678:POUDTE>2.0.ZU;2-V
Abstract
Ion-beam milling was used for sharpening of diamond particles on ends of silicon tips. The sharpened diamond samples were used as field-elec tron emitters. I-V characteristics of the emitters were measured. An e ffect of conditioning of the emitters was observed: After an emitter w orked at least several hours, its current increased for several orders of magnitude and became stabilized. (C) 1998 American Vacuum Society. [S0734-211X(98)02302-6].