FIELD-EMISSION ENERGY-DISTRIBUTION ANALYSIS OF WIDE-BAND-GAP FIELD EMITTERS

Citation
R. Schlesser et al., FIELD-EMISSION ENERGY-DISTRIBUTION ANALYSIS OF WIDE-BAND-GAP FIELD EMITTERS, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 16(2), 1998, pp. 689-692
Citations number
13
Categorie Soggetti
Physics, Applied","Engineering, Eletrical & Electronic
ISSN journal
10711023
Volume
16
Issue
2
Year of publication
1998
Pages
689 - 692
Database
ISI
SICI code
1071-1023(1998)16:2<689:FEAOWF>2.0.ZU;2-B
Abstract
Field emission from diamond and cubic boron nitride coated emitters ha s been investigated by field emission energy distribution (FEED) analy sis. In order to study the mechanisms governing the emission process, we developed a modified FEED technique that consisted of measuring ele ctron energy spectra as a function of the extraction voltage applied t o the field emitter. This technique has led to a detailed study of ban d bending effects due to field penetration. Voltage drop across the em itting, wide-band-gap layers (thickness typ. 0.5 mu m) was in the orde r of 1% of the applied extraction voltage. The observed FEED spectra a nd their dependence on the extraction voltage were explained in terms of a simplified band model. In nominally undoped diamond and cubic bor on nitride samples, field emission was found to originate from the con duction band minimum. Injection of electrons from the metallic back co ntact into the wide-band-gap material has been identified as the essen tial limiting factor to the emission current. Mo2C interlayers between Mo back contacts and emitting diamond layers were formed by annealing at 500 degrees C for several hours and led to more emission currents, typically enhanced by more than one order of magnitude. (C) 1998 Amer ican Vacuum Society. [S0734-211X(98)04302-9].