MODIFYING CHEMICAL-VAPOR-DEPOSITED DIAMOND FILMS FOR FIELD-EMISSION DISPLAYS

A systematic investigation of deposition parameters and post-treatment s was performed for the development of field emission displays based o n flat chemical vapor deposited diamond films. The lowest onset field strengths were obtained for films grown at the highest substrate tempe rature, highest methane content, and with negatively biased substrate. Intentionally damaging the films by implantation with 50 keV and 100 keV carbon ions as well as with 4.4 MeV silicon ions usually resulted in an enhanced field emission. The emission followed the Fowler-Nordhe im law up to 0.5 mA/mm(2), and a current carrying ability of more than 100 mA/mm(2) was detected. Considerably improved emission was achieve d by short and long-term processing at higher current levels. (C) 1998 American Vacuum Society. [S0734-211X(98)01602-3].